The HMC6505A is a compact gallium arsenide (GaAs), pseudomorphic (pHEMT), monolithic microwave integrated circuit (MMIC) upconverter in a RoHS compliant package that operates from 5.5 GHz to 8.6 GHz. This device provides a small signal conversion gain of 15 dB with 22 dBc of sideband rejection. The HMC6505A uses a variable gain amplifier (VGA) preceded by an in-phase and quadrature (I/Q) mixer that is driven by an active local oscillator (LO). The IF1 and IF2 mixer inputs are provided, and an external 90° hybrid is needed to select the required sideband. The I/Q mixer topology reduces the need for filtering of unwanted sideband. The HMC6505A is a smaller alternative to hybrid style single sideband (SSB) upconverter assemblies, and it eliminates the need for wire bonding by allowing the use of surface-mount manufacturing techniques. The HMC6505A is available in 5 mm × 5 mm, 32-terminal leadless chip carrier (LCC) package and operates over a −40°C to +85°C temperature range. An evaluation board for the HMC6505A is also available upon request. Applications * Point to point and point to multipoint radios * Military radars, electronic warfare (EW), and electronic intelligence (ELINT) * Satellite communications * Sensors * Conversion gain: 15 dB typical * Sideband rejection: 22 dBc typical * Output P1dB compression at maximum gain: 22 dBm typical * Output IP3 at maximum gain: 35 dBm typical * LO to RF isolation: 4 dB typical * LO to IF isolation: 9 dB typical * RF return loss: 20 dB typical * LO return loss: 10 dB typical * IF return loss: 20 dB typical * Exposed paddle, 5 mm × 5 mm, 32-terminal, leadless chip carrier package