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DG423 Improved, Low On-Resistance, Dual SPDT CMOS Analog Switch

Maxim-Dallas

DG423 Improved, Low On-Resistance, Dual SPDT CMOS Analog Switch RSS Sample
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Kod:
1006
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Maxim Integrated
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Create a design and simulate using EE-Sim® tools: Maxim's redesigned DG421/DG423/DG425 monolithic analog switches now feature guaranteed on-resistance matching (3Ω max) between switches and on-resistance flatness over the signal range (4Ω max). These low on-resistance switches (20Ω typ) conduct equally well in both directions. They guarantee a low charge injection of 15pC maximum and an ESD tolerance of 2000V minimum per Method 3015.7. Off leakage current over temperature has also been reduced (less than 5nA at +85°C).

The DG421/DG423/DG425 are precision, dual CMOS switches with latchable logic inputs that simplify interfacing with microprocessors (µPs). The single-pole/single-throw DG421 and double-pole/single-throw DG425 are normally open dual switches. The dual, single-pole/double-throw DG423 has two normally open and two normally closed switches. Fast switching times (175ns for tON and 145ns for tOFF) and low power consumption (35µW max) make these parts ideal for battery-powered applications requiring µP-compatible switches. Operation is from a single +10V to +30V supply, or bipolar ±4.5V to ±20V supplies. Fabricated with the same 44V silicon-gate process, these switches have rail-to-rail signal handling capabilities.

* Plug-In Upgrades for Industry-Standard DG421/DG423/DG425 * Improved R(DS)ON Match Between Channels (3Ω max) * Guaranteed RFLAT(ON) Over Signal Range (4Ω max) * Improved Charge Injection (15pC max) * Improved Off Leakage Current Over Temperature (Withstands Electrostatic Discharge (2000V min) per Method 3015.7

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