STGB50H65FB2 Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a D2PAK package
STMicroelectronics
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- Darmowa próbka
- MPN:
- STGB50H65FB2
- Producent:
- STMicroelectronics
- Obudowa:
- TO-263
- Dodany do bazy:
- Ostatnio widziany:
- Zmiana ceny:
- +33% (05.07.2025)
- Poprzednia cena:
- 2.05
| Ilość [ x szt]: | 10+ | 100+ | 500+ |
|---|---|---|---|
| Cena USD [za szt]: | 2.07 | 1.84 | 1.73 |
Sugerowane produkty dla stgb50h65fb2
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.
Elecena nie prowadzi sprzedaży elementów elektronicznych, ani w niej nie pośredniczy.
Produkt pochodzi z oferty sklepu STMicroelectronics