STPSC10H12G2Y-TR Automotive Grade 1200V, 10A, silicon carbide power Schottky Diode
STMicroelectronics
- Darmowa próbka
- MPN:
- STPSC10H12G2Y-TR
- Producent:
- STMicroelectronics
- Dodany do bazy:
- Ostatnio widziany:
- Zmiana ceny:
- +3.7% (02.12.2025)
- Poprzednia cena:
- 5.94
| Ilość [ x szt]: | 10+ | 100+ |
|---|---|---|
| Cena USD [za szt]: | 4.29 | 3.22 |
Sugerowane produkty dla stpsc10h12g2y
This 10 A, 1200 V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Housed in D2PAK HV, this diode is perfectly suited for a usage in PFC applications, in OBC, DC/DC for EV, easing the compliance to IEC-60664-1.
The STPSC10H12G2Y-TR will boost performances in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.
Elecena nie prowadzi sprzedaży elementów elektronicznych, ani w niej nie pośredniczy.
Produkt pochodzi z oferty sklepu STMicroelectronics