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  <title>[elecena] 576M-BIT Low Latency DRAM Separate I/O - zmiany ceny</title>
  <description>The µPD48576118F1 is a 33, 554, 432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell. The µPD48576118F1 integrate unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (CK and CK#) are latched on the positive edge of CK and CK#. These products are suitable for application which require synchronous operation, High-Speed, low voltage, high density and wide bit configuration.</description>
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