The ADRF5132 is a high power, reflective, 0.7 GHz to 5.0 GHz, silicon, single-pole, double-throw (SPDT) reflective switch in a leadless, surface-mount package. The switch is ideal for high power and cellular infrastructure applications, like long-term evolution (LTE) base stations. The ADRF5132 has high power handling of 35 dBm LTE (average typical at 105°C), a low insertion loss of 0.6 dB at 2.7 GHz, input third-order intercept of 65 dBm (typical), and 0.1 dB compression (P0.1dB) of 42.5 dBm. The on-chip circuitry operates at a single, positive supply voltage of 5 V and a typical supply current of 1.1 mA typical, making the ADRF5132 an ideal alternative to pin diode-based switches. The device is in a RoHS compliant, compact, 16-lead, 3 mm × 3 mm LFCSP package. Applications * Cellular/4G infrastructure * Wireless infrastructure * Military and high reliability applications * Test equipment * Pin diode replacement * Reflective, 50 Ω design * Low insertion loss: 0.6 dB typical at 2.7 GHz * High power handling at TCASE = 105°C * Long-term (>10 years operation) * Peak power: 43 dBm * CW power: 38 dBm * LTE power average (8 dB PAR): 35 dBm * Single event (<10 sec operation) * LTE power average (8 dB PAR): 41 dBm https://elecena.pl/product/17771945/high-power-20-w-peak-silicon-spdt-reflective-switch-0-7-ghz-to-5-0-ghz 2021-04-17 https://elecena.pl/product/17771945/high-power-20-w-peak-silicon-spdt-reflective-switch-0-7-ghz-to-5-0-ghz 2025-01-17