The ADRF5160 is a silicon-based, high power, 0.7 GHz to 4.0 GHz, silicon, single-pole, double-throw (SPDT) reflective switch in a leadless, surface-mount package. The switch is ideal for high power and cellular infrastructure applications, such as long-term evolution (LTE) base stations. The ADRF5160 has high power handling of 41 dBm (8 dB PAR LTE, long-term (>10 years) average typical), a low insertion loss of 0.7 dB typical to 2.0 GHz, an input third-order intercept (IP3) of 70 dBm (typical), and a 0.1 dB compression point (P0.1dB) of 47 dBm. On-chip circuitry operates at a single positive supply voltage of 5 V at a typical supply current of 1.1 mA, making the ADRF5160 an ideal alternative to pin diode-based switches. The ADRF5160 comes in a RoHS compliant, compact 32-lead, 5 mm × 5 mm LFCSP. Applications * Wireless infrastructure * Military and high reliability applications * Test equipment * Pin diode replacement * Reflective, 50 Ω design * Low insertion loss: 0.7 dB typical to 2.0 GHz * High power handling at TCASE = 105°C * Long term (>10 years) average * CW power: 43 dBm * Peak power: 49 dBm * LTE average power (8 dB PAR): 41 dBm * Single event (<10 sec) average * LTE average power (8 dB PAR): 44 dBm * High linearity * P0.1dB: 47 dBm typical * IP3: 70 dBm typical * ESD ratings * HBM: 4 kV, (Class 3A) * CDM: 1.25 kV * Single positive supply: 5 V * Positive control, CMOS/TTL compatible * 32-lead, 5 mm × 5 mm LFCSP package https://elecena.pl/product/17776819/high-power-88-w-peak-silicon-spdt-reflective-switch-0-7-ghz-to-4-0-ghz 2021-04-18 https://elecena.pl/product/17776819/high-power-88-w-peak-silicon-spdt-reflective-switch-0-7-ghz-to-4-0-ghz 2025-01-22