The SiC diode is an ultra high performance Schottky diode. It is manufactured from a silicon carbide substrate. The wide-band gap material allows a nominal voltage of 600 V. Due to the Schottky construction, there is no recovery at the junction. The minimum capacitive switch-off behaviour is independent of temperature. ST-SiC diodes will increase the performance of PFC operation under hard switching conditions. Features - no or negligible reverse recovery - Switching behaviour independent of temperature - suitable for PFC correction https://elecena.pl/product/17882796/stpsc2006cw-sic-dual-schottky-diode-600v-20a-2x10-to247 2021-04-26 https://elecena.pl/product/17882796/stpsc2006cw-sic-dual-schottky-diode-600v-20a-2x10-to247 2021-11-25 https://elecena.pl/product/17882796/stpsc2006cw-sic-dual-schottky-diode-600v-20a-2x10-to247 2022-10-18 https://elecena.pl/product/17882796/stpsc2006cw-sic-dual-schottky-diode-600v-20a-2x10-to247 2023-01-19 https://elecena.pl/product/17882796/stpsc2006cw-sic-dual-schottky-diode-600v-20a-2x10-to247 2024-04-26 https://elecena.pl/product/17882796/stpsc2006cw-sic-dual-schottky-diode-600v-20a-2x10-to247 2024-05-25 https://elecena.pl/product/17882796/stpsc2006cw-sic-dual-schottky-diode-600v-20a-2x10-to247 2024-07-13 https://elecena.pl/product/17882796/stpsc2006cw-sic-dual-schottky-diode-600v-20a-2x10-to247 2025-02-03 https://elecena.pl/product/17882796/stpsc2006cw-sic-dual-schottky-diode-600v-20a-2x10-to247 2026-02-16 https://elecena.pl/product/17882796/stpsc2006cw-sic-dual-schottky-diode-600v-20a-2x10-to247 2026-09-17