INCHANGE Semiconductor Silicon NPN Darlington Power Transistor Description: - Collector-emitter breakdown voltage - V(BR)CEO= 120V(min.) - High direct current amplification : hFE= 1000(min.)@IC= 20A - Low collector saturation voltage - VCE (sat)= 3.0V(Max.)@ IC= 20A - Addition to PNP MJ11015 - Minimal lot-to-lot variations for robust device performance and reliable operation applications: - Designed for use as output devices in complementary amplifier applications. https://elecena.pl/product/18212610/mj11016-darlington-transistor-npn-120v-30a-200w-to-3 2021-05-01 https://elecena.pl/product/18212610/mj11016-darlington-transistor-npn-120v-30a-200w-to-3 2022-11-09