IKW15T120 1200V Low Loss DuoPack IGBT and Diode : IGBT in TrenchStop® and Fieldstop technology with soft and fast recovery anti-parallel Emitter Controlled HE diode Features and Benefits: - Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP313D - Short circuit withstand time - 10µs - Designed for : - Frequency Converters - Uninterrupted Power Supply - TrenchStop® and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) - Low EMI - Low Gate Charge - Very soft, fast recovery anti-parallel Emitter Controlled HE diode - qualified according to JEDEC for target applications - Pb-free lead plating, halogen-free mould compound, RoHS compliant - Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/ https://elecena.pl/product/18331073/ikw15t120fksa1-igbt-transistor-n-ch-1200v-30a-110w-to-247 2021-05-04 https://elecena.pl/product/18331073/ikw15t120fksa1-igbt-transistor-n-ch-1200v-30a-110w-to-247 2023-01-05