INCHANGE Semiconductor Silicon PNP Darlington Power Transistor Description: - Collector-emitter breakdown voltage... - V(BR)CEO= -120V(min.) - High direct current amplification - - hFE= 1000(min.)@IC= -20A - Low collector saturation voltage... - VCE (sat)= -3.0V(Max.)@ IC= -20A - Complement to NPN MJ11016 applications: - Designed for use as output devices in complementary amplifier applications. https://elecena.pl/product/18757443/mj11015-darlington-transistor-pnp-120v-30a-200w-to-3 2021-06-10 https://elecena.pl/product/18757443/mj11015-darlington-transistor-pnp-120v-30a-200w-to-3 2022-10-18