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  <title>[elecena] Low Capacitance, Low Charge Injection, ±15 V/12 V iCMOS, Dual SPDT Switch - zmiany ceny</title>
  <description>The ADG1236 is a monolithic CMOS device containing two
independently selectable SPDT switches. It is designed on an
iCMOS® process. iCMOS (industrial CMOS) is a modular
manufacturing process combining high voltage complementary
metal-oxide semiconductor (CMOS) and bipolar technologies.
It enables the development of a wide range of high performance
analog ICs capable of 33 V operation in a footprint that no
previous generation of high voltage devices has been able to
achieve. Unlike analog ICs using conventional CMOS processes,
iCMOS components can tolerate high supply voltages while
providing increased performance, dramatically lower power
consumption, and reduced package size.

The ultralow capacitance and charge injection of the device
make it an ideal solution for data acquisition and sample-and-hold
applications, where low glitch and fast settling are required.
Fast switching speed coupled with high signal bandwidth makes
the device suitable for video signal switching. iCMOS construction
ensures ultralow power dissipation, making the device ideally
suited for portable and battery-powered instruments.

Each switch conducts equally well in both directions when on
and has an input signal range that extends to the supplies. In the
off condition, signal levels up to the supplies are blocked. Both
switches exhibit break-before-make switching action for use in
multiplexer applications.

Product Highlights

* 3 pF off capacitance (±15 V supply).

* 1 pC charge injection.

* 3 V logic-compatible digital inputs: VIH = 2.0 V, VIL = 0.8 V.

* No VL logic power supply required.

* Ultralow power dissipation: &amp;lt;0.03 µW.

* 16-lead TSSOP and 12-lead 3 mm × 3 mm LFCSP packages.

Applications

* Automatic test equipment

* Data acquisition systems

* Battery-powered systems

* Sample-and-hold systems

* Audio/video signal routing

* Communication systems

* 1.3 pF off capacitance

* 3.5 pF on capacitance

* 1 pC charge injection

* 33 V supply range

* 120 Ω on resistance

* Fully specified at +12 V, ±15 V

* No VL supply required

* 3 V logic-compatible inputs

* Rail-to-rail operation

* 16-lead TSSOP and 12-lead LFCSP packages

* Typical power consumption: &amp;lt;0.03 µW</description>
  <item>
   <title>Low Capacitance, Low Charge Injection, ±15 V/12 V iCMOS, Dual SPDT Switch - 0.00 USD</title>
   <link>https://elecena.pl/product/193738/low-capacitance-low-charge-injection-15-v-12-v-icmos-dual-spdt-switch</link>
   <pubDate>2007-02-22</pubDate>
  </item>
  <item>
   <title>Low Capacitance, Low Charge Injection, ±15 V/12 V iCMOS, Dual SPDT Switch - 2.35 USD</title>
   <link>https://elecena.pl/product/193738/low-capacitance-low-charge-injection-15-v-12-v-icmos-dual-spdt-switch</link>
   <pubDate>2018-03-28</pubDate>
  </item>
  <item>
   <title>Low Capacitance, Low Charge Injection, ±15 V/12 V iCMOS, Dual SPDT Switch - 0.00 USD</title>
   <link>https://elecena.pl/product/193738/low-capacitance-low-charge-injection-15-v-12-v-icmos-dual-spdt-switch</link>
   <pubDate>2025-01-22</pubDate>
  </item>
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