DG50X12T2, 1200 V IGBT with Diode General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS. Features - Low V CE(sat) Fast IGBT technology - Low switching loss - Maximum junction temperature 175 o C - V CE(sat) with positive temperature coefficient - Fast & soft reverse recovery anti parallel FWD - Lead free package Typical Applications - Inverter for motor drive - AC and DC servo drive amplifier - Uninterruptible power supply https://elecena.pl/product/20827391/dg50x12t2-igbt-transistor-n-channel-1200-v-100-a-1049-w-to-247-plus 2022-05-13 https://elecena.pl/product/20827391/dg50x12t2-igbt-transistor-n-channel-1200-v-100-a-1049-w-to-247-plus 2022-12-11 https://elecena.pl/product/20827391/dg50x12t2-igbt-transistor-n-channel-1200-v-100-a-1049-w-to-247-plus 2023-02-05 https://elecena.pl/product/20827391/dg50x12t2-igbt-transistor-n-channel-1200-v-100-a-1049-w-to-247-plus 2026-09-15