The LTC7891 is a high performance, step-down, dc-to-dc switching regulator controller that drives all N-channel synchronous gallium nitride (GaN) field effect transistor (FET) power stages from input voltages up to 100 V. The LTC7891 solves many of the challenges traditionally faced when using GaN FETs. The LTC7891 simplifies the application design while requiring no protection diodes and no other additional external components compared to a silicon metal-oxide semiconductor field effect transistor (MOSFET) solution. The internal smart bootstrap switch prevents overcharging of the BOOST pin to SW pin high-side driver supplies during dead times, protecting the gate of the top GaN FET. The LTC7891 internally optimizes the gate driver timing on both switching edges to achieve smart near zero dead times, significantly improving efficiency and allowing for high frequency operation, even at high input voltages. Alternatively, the user can adjust the dead times with external resistors for margin or to tailor the application. The gate drive voltage of the LTC7891 can be precisely adjusted from 4 V to 5.5 V to optimize performance, and to allow the use of different GaN FETs, or even logic level MOSFETs. APPLICATIONS * Automotive and industrial power systems * Military avionics and medical systems * Telecommunications power systems * GaN drive technology fully optimized for GaN FETs * Wide VIN range: 4 V to 100 V * Wide output voltage range: 0.8 V ≤ VOUT ≤ 60 V * No catch, clamp, or bootstrap diodes needed * Internal smart bootstrap switches prevent overcharging of high-side driver supplies * Internally optimized, smart near zero dead times or resistor adjustable dead times * Split output gate drivers for adjustable turn on and turn off driver strengths https://elecena.pl/product/21918356/100-v-low-i-synchronous-step-down-controller-for-gan-fets 2022-10-26 https://elecena.pl/product/21918356/100-v-low-i-synchronous-step-down-controller-for-gan-fets 2025-01-18