The MAX11008 controller biases RF LDMOS power devices found in cellular base stations and other wireless infrastructure equipment. Each controller includes a high-side current-sense amplifier with programmable gains of 2, 10, and 25 to monitor the LDMOS drain current over a range of 20mA to 5A. The MAX11008 supports up to two external diode-connected transistors to monitor the LDMOS temperatures while an internal temperature sensor measures the local die temperature. A 12-bit successive-approximation register (SAR) analog-to-digital converter (ADC) converts the analog signals from the programmable-gain amplifiers (PGAs), external temperature sensors, internal temperature measurement, and two additional auxiliary inputs. The MAX11008 automatically adjusts the LDMOS bias voltages by applying temperature, AIN, and/or drain current samples to data stored in lookup tables (LUTs). The MAX11008 includes two gate-drive channels, each consisting of a 12-bit DAC to generate the positive gate voltage for biasing the LDMOS devices. Each gate-drive output supplies up to ±2mA of gate current. The gate-drive amplifier is current-limited to ±25mA and features a fast clamp to AGND. The MAX11008 contains 4Kb of on-chip, nonvolatile EEPROM organized as 256 bits x 16 bits to store LUTs and register information. The device operates from either a 4-wire 16MHz SPI™-/MICROWIRE™-compatible or an I²C-compatible serial interface. The MAX11008 operates from a +4.75V to +5.25V analog supply with a typical supply current of 2mA, and a +2.7V to +5.25V digital supply with a typical supply of 3mA. The device is packaged in a 48-pin, 7mm x 7mm, thin QFN package and operates over the extended (-40°C to +85°C) temperature range. Applications * Cellular Base Stations * Feed-Forward Power Amps * Industrial Process Control * Microwave Radio Links * Transmitters * On-Chip 4Kb EEPROM for Storing LDMOS Bias Characteristics * Integrated High-Side Current-Sense PGA with Gain of 2, 10, or 25 * ±0.75% Accuracy for Sense Voltage Between +75mV and +1250mV * Full-Scale Sense Voltage * +100mV with a Gain of 25 * +250mV with a Gain of 10 * +1250mV with a Gain of 2 * Common-Mode Range, LDMOS Drain Voltage: +5V to +32V * Adjustable Low-Noise 0 to AVDD Output Gate Bias Voltage Range * Fast Clamp to AGND for LDMOS Protection * 12-Bit DAC Control of Gate with Temperature * Internal Die Temperature Measurement * 2-Channel External Temperature Measurement through Remote Diodes * Internal 12-Bit ADC Measurement for Temperature, Current, and Voltage Monitoring * User-Selectable Serial Interface * 400kHz/1.7MHz/3.4MHz I²C-Compatible Interface * 16MHz SPI-/MICROWIRE-Compatible Interface https://elecena.pl/product/22313153/dual-rf-ldmos-bias-controller-with-nonvolatile-memory 2022-12-26 https://elecena.pl/product/22313153/dual-rf-ldmos-bias-controller-with-nonvolatile-memory 2025-01-20