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  <title>[elecena] 3.6V, 1W RF Power Transistors for 900MHz Applications - zmiany ceny</title>
  <description>The MAX2601/MAX2602 are RF power transistors optimized for use in portable cellular and wireless equipment that operates from three NiCd/NiMH cells or one Li-Ion cell. These transistors deliver 1W of RF power from a 3.6V supply with efficiency of 58% when biased for constant-envelope applications (e.g., FM or FSK). For NADC (IS-54) operation, they deliver 29dBm with -28dBc ACPR from a 4.8V supply.

The MAX2601 is a high-performance silicon bipolar RF power transistor. The MAX2602 includes a high-performance silicon bipolar RF power transistor, and a biasing diode that matches the thermal and process characteristics of the power transistor. This diode is used to create a bias network that accurately controls the power transistor’s collector current as the temperature changes.

The MAX2601/MAX2602 can be used as the final stage in a discrete or module power amplifier. Silicon bipolar technology eliminates the need for voltage inverters and sequencing circuitry, as required by GaAsFET power amplifiers. Furthermore, a drain switch is not required to turn off the MAX2601/MAX2602. This increases operating time in two ways: it allows lower system end-of-life battery voltage, and it eliminates the wasted power from a drain-switch device.

The MAX2601/MAX2602 are available in thermally enhanced, 8-pin SO packages, which are screened to the extended temperature range (-40°C to +85°C).

Applications

* 915MHz ISM Transmitters
* AMPS Cellular Phones
* CDPD Modems
* Digital Cellular Phones
* Land Mobile Radios
* Microcellular GSM (Power Class 5)
* Narrow-Band PCS (NPCS)
* Two-Way Paging

* Low Voltage: Operates from 1 Li-Ion or 3 NiCd/NiMH Batteries

* DC-to-Microwave Operating Range

* 1W Output Power at 900MHz

* On-Chip Diode for Accurate Biasing (MAX2602)

* Low-Cost Silicon Bipolar Technology

* Does Not Require Negative Bias or Supply Switch

* High Efficiency: 58%</description>
  <item>
   <title>3.6V, 1W RF Power Transistors for 900MHz Applications - 3.37 USD</title>
   <link>https://elecena.pl/product/22322313/3-6v-1w-rf-power-transistors-for-900mhz-applications</link>
   <pubDate>2022-12-27</pubDate>
  </item>
  <item>
   <title>3.6V, 1W RF Power Transistors for 900MHz Applications - 0.00 USD</title>
   <link>https://elecena.pl/product/22322313/3-6v-1w-rf-power-transistors-for-900mhz-applications</link>
   <pubDate>2024-11-04</pubDate>
  </item>
  <item>
   <title>3.6V, 1W RF Power Transistors for 900MHz Applications - 3.37 USD</title>
   <link>https://elecena.pl/product/22322313/3-6v-1w-rf-power-transistors-for-900mhz-applications</link>
   <pubDate>2024-11-09</pubDate>
  </item>
  <item>
   <title>3.6V, 1W RF Power Transistors for 900MHz Applications - 0.00 USD</title>
   <link>https://elecena.pl/product/22322313/3-6v-1w-rf-power-transistors-for-900mhz-applications</link>
   <pubDate>2025-01-19</pubDate>
  </item>
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