Technical Data: Transistor type: N-MOSFET Technology: HEXFET® Polarization: unipolar Drain-source voltage: 100V Drain Current: 130A Dissipated power: 370W Case: TO220AB Gate-source voltage: ± 20V Forward resistance: 4.5mΩ Mounting: THT Gate Charge: 150nC Channel type: enriched https://elecena.pl/product/22625454/irfb4110pbf-100v-130a-370w-n-mosfet-transistor 2023-02-23 https://elecena.pl/product/22625454/irfb4110pbf-100v-130a-370w-n-mosfet-transistor 2024-03-15 https://elecena.pl/product/22625454/irfb4110pbf-100v-130a-370w-n-mosfet-transistor 2025-10-26 https://elecena.pl/product/22625454/irfb4110pbf-100v-130a-370w-n-mosfet-transistor 2025-10-28