MSC030SDA330B

Our mSiC Diodes are engineered to deliver superior performance and efficiency. Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) offer a lower forward voltage drop, higher switching speeds and reduced power losses. This enables improved efficiency, reduced thermal requirements and enhanced reliability.

This 3300V (3.3 kV) mSiC diode offers significant advantages in diverse applications with a forward current rating of up to 30A ensures robust performance in high-power applications. The reverse leakage current is minimized to 5 µA, providing excellent efficiency and reliability. mSiC diodes in a TO-247 2-lead package deliver exceptional performance for high-power and high-frequency applications.

The TO-247 package is designed for optimal thermal management, with a large surface area that ensures efficient heat dissipation, enabling reliable operation under heavy loads. This package accommodates high current and voltage ratings, making it ideal for demanding applications. SiC diodes' inherent benefits are further enhanced by the rugged and straightforward design of the TO-247 package, offering engineers a versatile and efficient solution for high-performance power systems.