The LTC1155 dual high side gate driver allows using low cost N-channel FETs for high side switching applications. An internal charge pump boosts the gate above the positive rail, fully enhancing an N-channel MOSFET with no external components. Micropower operation, with 8μA standby current and 85μA operating current, allows use in virtually all systems with maximum efficiency. Included on-chip is overcurrent sensing to provide automatic shutdown in case of short circuits. A time delay can be added in series with the current sense to prevent false triggering on high in-rush loads such as capacitors and incandescent lamps. The LTC1155 operates off of a 4.5V to 18V supply input and safely drives the gates of virtually all FETs. The LTC1155 is well suited for low voltage (battery-powered) applications, particularly where micropower “sleep” operation is required. The LTC1155 is available in both 8-pin PDIP and 8-pin SO packages. APPLICATIONS * Laptop Power Bus Switching * SCSI Termination Power Switching * Cellular Phone Power Management * P-Channel Switch Replacement * Relay and Solenoid Drivers * Low Frequency Half H-Bridge * Motor Speed and Torque Control * Fully Enhances N-Channel Power MOSFETs * 8μA Standby Current * 85μA ON Current * Short-Circuit Protection * Wide Power Supply Range: 4.5V to 18V https://elecena.pl/product/249236/dual-high-side-micropower-mosfet-driver 2007-03-01 https://elecena.pl/product/249236/dual-high-side-micropower-mosfet-driver 2016-04-13 https://elecena.pl/product/249236/dual-high-side-micropower-mosfet-driver 2025-01-21