A complementary Darlington power transistor with an silicon epitaxial-base, monolithic configuration and integrated anti-parallel collector-emitter diode. Typical applications includes linear and switching industrial equipment. * NPN Polarity * 100V Collector-Emitter voltage * 100V Collector-Base voltage * 5V Emitter-Base voltage * 12A Collector current * 80W Power * 20000 DC Current gain * 100uA Collector cut-off current * 3V Collector-Emitter saturation voltage * TO-220 Case https://elecena.pl/product/27240010/fairchild-semiconductor-bdw93c-dar-npn-100v-12a-to220-st 2024-11-12 https://elecena.pl/product/27240010/fairchild-semiconductor-bdw93c-dar-npn-100v-12a-to220-st 2025-08-10 https://elecena.pl/product/27240010/fairchild-semiconductor-bdw93c-dar-npn-100v-12a-to220-st 2025-09-20 https://elecena.pl/product/27240010/fairchild-semiconductor-bdw93c-dar-npn-100v-12a-to220-st 2026-05-06