<?xml version="1.0" encoding="UTF-8"?>
<!--Generated at Sun, 26 Jul 2026 16:59:02 +0200-->
<rss version="2.0">
 <channel>
  <title>[elecena] High Power, 40 W Peak, Silicon SPDT, Reflective Switch, 8 GHz to 11 GHz - zmiany ceny</title>
  <description>The ADRF5142 is a reflective single-pole, double-throw (SPDT)
switch manufactured in the silicon process.

The ADRF5142 operates from 8 GHz to 11 GHz with a 1.2 dB
typical insertion loss and a 40 dB typical isolation. The device has
a radio frequency (RF) input power handling capability of 41 dBm
average power and 46 dBm peak power for the insertion loss path.

The ADRF5142 draws a low current of 130 μA on the positive supply
of +3.3 V and 500 μA on negative supply of −3.3 V. The device
employs complementary metal-oxide semiconductor (CMOS)-/lowvoltage
transistor to transistor logic (LVTTL)-compatible controls.
The ADRF5142 requires no additional driver circuitry, which makes
it an ideal alternative to GaN and PIN diode-based switches.

The ADRF5142 comes in a 20-lead, 3.0 mm × 3.0 mm, RoHS-compliant,
land grid array (LGA) package and operates from −40°C to
+85°C.

* Frequency range: 8 GHz to 11 GHz

* Low insertion loss: 1.2 dB (typical)

* High isolation: 40 dB (typical)

* High input linearity

* 0.1 dB power compression (P0.1dB): 46 dBm

* Third-order intercept (IP3): 70 dBm

* High power handling at TCASE = 85°C:

* Insertion loss path

* Average: 41 dBm

* Pulsed (&amp;gt; 100 ns pulse width, 15% duty cycle): 44 dBm

* Peak (≤ 100 ns peak duration, 5% duty cycle): 46 dBm

* Hot switching at RFC (Pin 3): 41 dBm</description>
 </channel>
</rss>
