0.3 GHz to 6 GHz, 39.5 dBm, GaN Power Amplifier

The ADPA1116 is a 0.3 GHz to 6 GHz power amplifier with a saturated output power (POUT) of 39.5 dBm, power added efficiency (PAE) of 40%, and a power gain of 23.5 dB typical from 0.5 GHz to 5 GHz at an input power (PIN) of 16.0 dBm. The RF input and RF output are internally matched and AC-coupled. A drain bias voltage of 28 V is applied to the VDD1 and VDD2 pins, which have integrated bias inductors. The drain current is set by applying a negative voltage to the VGG1 pin.

The ADPA1116 is fabricated on a gallium nitride (GaN) process, is housed in a 32-lead lead frame chip scale package, premolded cavity [LFCSPCAV], and is specified for operation from −40°C to +85°C.

* Internally matched, 0.3 GHz to 6 GHz, 39.5 dBm, GaN power amplifier

* RF input and RF output AC-coupled

* Integrated drain bias inductors

* Output power: 39.5 dBm typical from 0.5 GHz to 5 GHz (PIN = 16.0 dBm)

* Power gain: 23.5 dB typical from 0.5 GHz to 5 GHz (PIN = 16.0 dBm)