The 1011GN-1200V/VEL are internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistors capable of providing over 18.5 dB gain, 1200 Watts of pulsed RF output power at 32us, 2% duty cycle pulse format across the 1030 to 1090 MHz band and can also transmit Mode-S ELM pulse format. The transistor has an internal pre-match for optimal performance and uses gold metallization to provide highest reliability and superior ruggedness.