The TP65H035G4WS 650V 35mΩ Gallium Nitride (GaN) FET is a normally-off device built using our GenIV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage Silicon MOSFET to offer superior reliability and performance. Renesas' GaN power products offer improved efficiency over silicon through lower gate charge, lower crossover loss, and smaller reverse recovery charge. The TP65H035G4WS is offered in an industry-standard 3-lead TO-247 with a common source package configuration.