Our mSiC MOSFETs enable high-efficiency and robust performance in demanding, high-voltage applications. Leveraging over 20 years of silicon carbide (SiC) experience, these SiC MOSFETs are designed to maximize system efficiency while significantly reducing system weight and size. The MSC360SMA120SDT/R is part of our MA Family of mSiC MOSFETs. This 1200V SiC MOSFET uses a gate drive voltage of 18-20V to ensure reliable switching performance with a low RDS(on) of 360 mOhms, minimizing conduction losses and enhancing overall system efficiency. This device is suitable for high-power applications, capable of handling continuous drain currents of 12A. With maximum ratings reaching up to 175°C, SiC MOSFETs can operate at elevated junction temperatures to provide superior thermal performance and reliability in harsh environments. The TO-263-7 XL package, also known as D2PAK-7L XL, features an extended lead design that enhances electrical connectivity and thermal performance. These SiC MOSFETs deliver superior switching performance, reduced conduction losses, and higher thermal conductivity compared to traditional silicon-based MOSFETs. The extended lead design of the D2PAK-7L XL package allows for improved heat dissipation and easier integration into power systems.