This 4A, 45V Schottky Barrier Diode specification covers the performance requirements for a silicon, fast recovery diodes. This 1N6492 diode family is metallurgically bonded and hermetically sealed for military grade, high-reliability applications Three levels of product assurance are available, JAN, JANTX and JANTXV, for the military grade encapsulated devices, as specified in MIL-PRF-19500/567. The device package outline for this specification sheet is a TO-205AF, formerly low profile TO-39, and surface mount version U4 also available as RoHS compliant. The average rectifier output current (Io) for this family is 4 Amps, with working peak reverse voltages (Vrwm) of 45V, maximum forward voltages (Vf) of 0.56V to 0.68V and maximum reverse leakage currents (Ir) of 2.0mA at 25 Celsius and 20mA at 125 degrees Celsius, with a Ct of 450pf.