JAN2N2920-Dual-Transistor

This specification covers the performance requirements for two electrically isolated, matched NPN radiation hardened silicon 2N2919 and 2N2920, unitized transistors as one dual unit. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/355, and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device (die), as specified in MIL-PRF-19500/355. Provisions for radiation hardness assurance (RHA) to eight radiation levels ("M", "D", "P", "L", "R”, “F”, “G” and “H”) are provided for JANTXV, JANS, JANHC, JANKC, JANHCD, and JANKCD product assurance levels. The device package for the encapsulated device type are as follows: similar to TO-78 and surface mount version. The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/355.