This 30A, 45V Schottky Barrier Diode specification covers the performance requirements for a silicon Schottky, Power Rectifier, common cathode, common anode, doubler type. This 1N6660 diode family is metallurgically bonded and hermetically sealed for military grade, high-reliability applications. Four levels of product assurance are available, JAN, JANTX, JANTXV and JANS, for the military grade encapsulated devices, as specified in MIL-PRF-19500/608. The device package outline for this specification sheet is a TO-254AA. The average rectifier output current (Io) for this family is 30 Amps, with working peak reverse voltages (Vrwm) of 45V, maximum forward voltages (Vf) of 0.55V to 1.0V and maximum reverse leakage currents (Ir) of 1.0mA at 25 Celsius and 40mA at 125 degrees Celsius, with a Ct of 2000pf, per leg.