This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction. https://elecena.pl/product/28320775/sct014to65g3-silicon-carbide-power-mosfet-650-v-13-5-mohm-typ-110-a-in-a-to-ll-package 2025-04-11 https://elecena.pl/product/28320775/sct014to65g3-silicon-carbide-power-mosfet-650-v-13-5-mohm-typ-110-a-in-a-to-ll-package 2025-09-02