The HIP1020 applies a linear voltage ramp to the gates of any combination of 3. 3V, 5V, and 12V MOSFETs. The internal charge pump doubles a 12V bias or triples a 5V bias to deliver the high-side drive capability required when using more cost-effective N-Channel MOSFETs. The 5V/ms ramp rate is controlled internally and is the proper value to turn on most devices within the Device-Bay-specified di/dt limit. If a slower rate is required, the internally-determined ramp rate can be over ridden using an optional external capacitor. When VCC = 12V, the charge pump ramps the voltage on HGATE from zero to 22V in about 4ms. This allows either a standard or a logic-level MOSFET to become fully enhanced when used as a high-side switch for 12V power control. The voltage on LGATE ramps from zero to 16V allowing the simultaneous control of 3. 3V and/or 5V MOSFETs. When VCC = 5V, the charge pump enters voltage-tripler mode. The voltage on HGATE ramps from zero to 12. 5V in about 3ms while LGATE ramps to 12. 0V. This mode is ideal for control of high-side MOSFET switches used in 3. 3V and 5V power switching when 12V bias is not available.