NCD57090A, NCD57090B, NCD57090C, NCD57090D, NCD57090E and NCD57090F are high−current single channel SiC/MOSFET/IGBT gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options such as Active Miller Clamp (NCD57090A/D/F), negative power supply (NCD57090B) and separate high and low (OUTH and OUTL) driver outputs (NCD57090C/E) for system design convenience. NCD57090 (A/B/C/D/E/F) accommodate wide range of input bias voltage and signal levels from 3.3 V to 20 V. NCD57090 (A/B/C/D/E/F) are available in wide−body SOIC−8 package.