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  <title>[elecena] Silicon Carbide (SiC) JFET - EliteSiC, 7.1 mohm, 1200V, TO-247-4L - zmiany ceny</title>
  <description>The UF3N120007K4S is a 1200 V, 7.1mohm high-performance Gen
3 normally-on SiC JFET transistor. This device exhibits ultra-low on
resistance (RDS(on)) in a TO-247-4L package, making it an ideal fit to
address the challenging thermal constraints of solid-state circuit
breakers and relay applications. Additionally, the JFET is a robust
device technology capable of the high-energy switching required in
circuit protection applications.</description>
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