NID5001N is part of an advanced series of power MOSFETs which utilize onsemi's latest MSOFET technology process to achieve the lowest possible on-resistance per silicon are while incorporating smart features. Integrated thermal and current limits work together to provide short circuit protection. The devices feature an integrated Drain-to-Gate Clamp that enables them to withstand high energy in the avalanche mode. The clamp also provides additional safety margin against unexpected voltage transients. Electrostatic Discharge (ESD) protection is provided by an integrated Gate-to-Source clamp.