[elecena] Silicon Carbide (SiC) Module – EliteSiC, 10 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package

[elecena] Silicon Carbide (SiC) Module – EliteSiC, 10 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package - zmiany ceny The NXH010P120M3F1PTG is a power module containing 10 mohm / 1200 V SiC MOSFET half−bridge and a thermistor with Alumina (AL2O3) DBC in an F1 package. The SiC MOSFET switches use M3S technology and are driven with 18V-20V gate drive.