[elecena] Silicon Carbide (SiC) Module – EliteSiC, 6 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package

[elecena] Silicon Carbide (SiC) Module – EliteSiC, 6 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package - zmiany ceny The NXH006P120M3F2PTHG is a power module containing 6 mohm / 1200 V SiC MOSFET half−bridge and a thermistor with HPS DBC in an F2 package. The SiC MOSFET switches use M3S technology and are driven with 15V-18V gate drive.