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N-Channel Enhancement Mode Field Effect Transistor 30V, 6.5A, 35mΩ

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MPN:
FDT459N
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These N-Channel enhancement mode power field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance. These products are well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor control.

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