This logic level power MOSFET features current limiting for short circuit protection, integrated Gate-Source clamping for ESD protection and integral Gate-Drain clamping for over-voltage protection and technology for low on-resistance. No additional gate series resistance is required when interfacing to the output of a MCU, but a 40 kΩ gate pulldown resistor is recommended to avoid a floating gate condition. The internal Gate-Source and Gate-Drain clamps allow the device to be applied without use of external transient suppression components. The Gate-Source clamp protects the MOSFET input from electrostatic voltage stress up to 2.0 kV. The Gate-Drain clamp protects the MOSFET drain from the avalanche stress that occurs with inductive loads. Their unique design provides voltage clamping that is essentially independent of operating temperature.