This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Ultra Field Stop Trench construction, and providessuperior performance in demanding switching applications, offeringlow switching losses. The IGBT is well suited for applications thatrequire fast switching IGBT with low VF diodes, e.g. phase−shifted fullbridge, etc. Incorporated into the device is a free wheeling diode with alow forward voltage.