This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective ultra Field Stop (FS) Trench construction and providessuperior performance. It is especially designed for low on−state and iswell suited for resonant or soft switching topologies, such as thoseused in inductive heating applications. The device contains a reverseconducting diode integrated on the same die, which makes the deviceconstruction very cost effective.