[elecena] 20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination

[elecena] 20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination - zmiany ceny Small-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA) Schottky diode combined in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.