The TP70H150G4LSGB 700V, 150mΩ Gallium Nitride (GaN) FET, housed in an 8x8 PQFN industry-standard package, is a normally-off device built on Renesas' Gen IV SuperGaN® platform. It integrates a high-voltage GaN HEMT with an optimized low-voltage silicon MOSFET, achieving over 2kV HBM ESD rating. This device delivers superior performance, standard drive compatibility, easy adoption, and enhanced reliability.