The TP70H300G4JSGB 700V 240mΩ Gallium Nitride (GaN) FET, housed in a 5x6 PQFN performance package, is a normally-off device built on Renesas' Gen IV SuperGaN® platform. It integrates a high-voltage GaN HEMT with an optimized low-voltage silicon MOSFET, achieving over 2kV HBM ESD rating, to deliver superior performance, standard drive compatibility, ease of adoption, and enhanced reliability.