The TP70H150G4LSG 700V 150mΩ Gallium Nitride (GaN) FET, housed in an 8x8 PQFN performance package, is a normally-off device built on Renesas' Gen IV SuperGaN® platform. It integrates a high-voltage GaN HEMT with an optimized low-voltage silicon MOSFET, delivering exceptional performance, standard drive compatibility, ease of adoption, and enhanced reliability.