Renesas' 8th-generation insulated-gate bipolar transistors (IGBTs) feature an exclusive trench gate configuration in the process structure. These devices deliver faster switching performance compared to earlier IGBT generations and reduce conduction losses by lowering the saturation voltage. The RBN75N125S1UFWA 1250V/75A IGBT offers a low collector-to-emitter saturation voltage, making it suitable for power switching applications. It is available as an unsawn wafer.