[elecena] Radiation Hardened 12V Half-Bridge GaN FET Driver

[elecena] Radiation Hardened 12V Half-Bridge GaN FET Driver - zmiany ceny The ISL73041SEH is a PWM input 12V half-bridge GaN FET driver designed to drive low rDS(ON), high QGS enhancement-mode Gallium Nitride (eGaN) FETs up to 1.5MHz operation for DC/DC switching regulators. An integrated programmable GaN FET gate drive voltage, high-side bootstrap switch, and high gate drive current provide a compact and robust GaN FET half-bridge driver. The ISL73041SEH is designed to interface directly to the ISL73847SEH dual-phase PWM buck controller to create a high-efficiency point-of-load regulator to power many of the latest low-voltage high-current FPGA and DSP digital core rails. The ISL73041SEH is offered in a 16 Ld Ceramic Leadless Chip Carrier (CLCC) hermetic package. It is specified to operate across an ambient temperature range of -55°C to +125°C.