Renesas' AE5 IGBTs for automotive applications use a unique trench gate configuration in their process structure. * The lowest conduction loss on the market * Achieve low saturation voltage, low switching loss, and chip shrink without sacrificing robustness * Easier parallel operation by suppressing Vth variation * Achieve Tjmax 185degC from 175degC (AE4), resulting in more stable performance in high temperature area This 750V/300A IGBT is optimized for high-power applications such as hybrid and electric vehicle drive inverters.