The ADL9006S is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), low noise amplifier that operates between 2 GHz and 28 GHz. The amplifier provides 15.5 dB of gain, 2.5 dB noise figure, 26 dBm output third-order intercept (OIP3), and 20 dBm of output power for 1 dB compression (OP1dB) while requiring 53 mA from a 5 V supply. The ADL9006S is self-biased with only a single positive supply needed to achieve a supply current (IDD) of 53 mA. The ADL9006S amplifier input and output are internally matched to 50 Ω. Applications * Local Oscillator Driver Amp * Signals Intelligence * Military & Space * OP1dB: +20 dBm Typical from 2 GHz to 6 GHz * PSAT: +20.5 dBm Typical from 2 GHz to 6 GHz * Gain: 15.5 dB Typical from 6 GHz to 28 GHz * Noise Figure: 2.5 dB Typical from 2 GHz to 20 GHz * OIP3: +26 dBm Typical from 2 GHz to 6 GHz