Tranzystor: N-MOSFET; unipolarny; Vds 40V; Vgs ±20V; Id 14A; Idsm 11A; Rdson <11.5mR; ESD 4KV HBM; Pd 2W; SO8; 40V N-Channel MOSFET Trench, low gate charge, ESD protected, low side swtich in SMPS; Datasheet: www.aosmd.com/sites/default/files/res/datasheets/AO4480.pdf