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  <title>[elecena] SI2301CDS-T1-GE3 MOSFET, P-channel, -20 V, -1.8 A, 0.112R, SOT-23 - zmiany ceny</title>
  <description>Power MOSFET

Description:
The third generation of power MOSFETs from Vishay provides the developer with the ultimate combination of fast switching, robust component design, low on-resistance and cost efficiency. The DPAK is intended for surface mounting using vapour phase, infrared or wave soldering techniques. The straight line version (IRFU or SiHFU series) is intended for through-hole mounting applications. In typical surface mounting applications, power losses of up to 1.5 W are possible.

Features:
• Dynamic dV/dt evaluation
• Repeated avalanche rating
• SMD mounting (IRFR9024, SiHFR9024)
• Straight connections (IRFU9024, SiHFU9024)
• Available as belted goods
• P-channel
• Fast switching</description>
  <item>
   <title>SI2301CDS-T1-GE3 MOSFET, P-channel, -20 V, -1.8 A, 0.112R, SOT-23 - 0.26 EUR</title>
   <link>https://elecena.pl/product/29485612/si2301cds-t1-ge3-mosfet-p-channel-20-v-1-8-a-0-112r-sot-23</link>
   <pubDate>2025-11-06</pubDate>
  </item>
  <item>
   <title>SI2301CDS-T1-GE3 MOSFET, P-channel, -20 V, -1.8 A, 0.112R, SOT-23 - 0.33 EUR</title>
   <link>https://elecena.pl/product/29485612/si2301cds-t1-ge3-mosfet-p-channel-20-v-1-8-a-0-112r-sot-23</link>
   <pubDate>2026-06-27</pubDate>
  </item>
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