Infineon Technologies IHW20N120R5XKSA1 is an advanced isolated gate bipolar transistor (IGBT) housed in a TO-247 package, optimised for high-efficiency performance in power switching applications. Operating at a maximum voltage of 1200 volts, this IGBT is designed to handle significant power loads with reduced switching losses, making it particularly suitable for applications such as induction heating, motor drives, and power supply inverters. The device integrates a cutting-edge silicon semiconductor technology that enhances thermal efficiency and reliability, ensuring stable operation even under demanding conditions. Its robust design caters to various industrial sectors where efficient energy conversion and high current management are critical. https://elecena.pl/product/29525087/infineon-ihw20n120r5xksa1-to-247-1200v-tube-igbt 2025-11-20 https://elecena.pl/product/29525087/infineon-ihw20n120r5xksa1-to-247-1200v-tube-igbt 2026-05-03 https://elecena.pl/product/29525087/infineon-ihw20n120r5xksa1-to-247-1200v-tube-igbt 2026-05-25 https://elecena.pl/product/29525087/infineon-ihw20n120r5xksa1-to-247-1200v-tube-igbt 2026-06-17 https://elecena.pl/product/29525087/infineon-ihw20n120r5xksa1-to-247-1200v-tube-igbt 2026-07-10